GaN ON 6H-SiC -- STRUCTURAL AND OPTICAL PROPERTIES

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explai...

Properties of GaN grown at high rates on sapphire and on 6H–SiC

Thick GaN films were deposited with growth rates as high as 250 mm/h by the direct reaction of ammonia and gallium vapor at 1240 °C. The characteristics of our films are comparable to those of typical thin films grown by metal organic chemical vapor deposition or molecular beam epitaxy. Grown under identical conditions, films on ~0001! sapphire and on ~0001! 6H–SiC were compared in terms of the...

GaN epitaxial layers grown on WI-SIC by the sublimation sandwich technique

We report on the structural and optical properties of GaN epitaxial layers grown on GH-Sic. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2 X 1Oi7 cmw3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These tidings are directly reflected in th...

Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

A number of wurtzite GaN epilayers directly grown on 4H-SiC ~0001! misoriented by 0, 3.5°, 5°, 8°, and 21° with plasma-assisted molecular-beam epitaxy were optically characterized with photoluminescence and excitation spectra. An intense shallow-defect emission peak locating at energy position ;70 meV lower than the near band edge emission peak at 3.47 eV is found in the emission spectra of the...

Title Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates